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US 2022/0285358 A1Published application
Semiconductor device and fabrication method of the same
AssigneeSK hynix Inc.
InventorSeung Mi LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a bit line structure formed over a substrate; a storage node contact plug spaced apart from the bit line structure; and a nitride spacer positioned between the bit line structure and the storage node contact plug, wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure,
Claims14
A semiconductor device, comprising:
- a bit line structure formed over a substrate;
- a storage node contact plug spaced apart from the bit line structure;
- and
- a nitride spacer positioned between the bit line structure and the storage node contact plug,
- wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure.
2 more elements
A semiconductor device, comprising:
- a bit line structure formed over the substrate;
- a storage node contact plug spaced apart from the bit line structure;
- and
- an air gap spacer positioned between the bit line structure and the storage node contact plug, and a nitride spacer over the air gap spacer,
- wherein the nitride spacer has the lowest silicon content in a central portion, and has a higher silicon content in a portion adjacent to the storage node contact plug than in the central portion.
2 more elements
Dependencies are inferred from the claim text.