Multiplexor for a semiconductor device

A method of operating a memory device, comprising:

• activating a vertical sense line coupled to a vertical stack of the memory device;
• activating a second multiplexor switch of a multiplexor portion of the vertical stack to drain a charge from a storage node of the vertical stack, wherein a first terminal of the second multiplexor switch is coupled to the vertical sense line and a second terminal of the second multiplexor switch is coupled to a vertical portion of the storage node of the vertical stack;
• and
• activating a first multiplexor switch of the multiplexor portion of the vertical stack to select the vertical sense line, wherein a first terminal of the first multiplexor switch is coupled to the vertical sense line and a second terminal of the first multiplexor switch is coupled to the horizontal sense line.

A method of sensing a memory cell in an array of memory cells, comprising:

• among a respective plurality of horizontal access lines coupled to each of a plurality of vertically stacked tiers of memory cells, activating a particular horizontal access line coupled to the memory cell;
• electrically coupling a vertical sense line to a horizontal sense line via a multiplexor in the array of memory cells, wherein the vertical sense line is coupled to the memory cell;
• and
• sensing the memory cell with a sense amplifier in semiconductor under the array (SuA) circuitry, wherein the sense amplifier is coupled to the horizontal sense line.