US 2022/0285349 A1 · Memory Cell and Method

Abstract

An improved memory cell architecture including a nanostructure field-effect transistor (nano-FET) and a horizontal capacitor extending at least partially under the nano-FET and methods of forming the same are disclosed. In an embodiment, semiconductor device includes a channel structure over a semiconductor substrate; a gate structure encircling the channel structure; a first source/drain region adjacent the gate structure; and a capacitor adjacent the first source/drain region, the capacitor extending under the first source/drain region and the gate structure in a cross-sectional view.

Claims20

Dependent claims

A semiconductor device comprising:

a first transistor structure comprising:
a channel structure on a semiconductor substrate;
a gate structure on the channel structure;
a first source/drain region adjacent the gate structure;
a second source/drain region adjacent the gate structure opposite the first source/drain region;
and
a capacitor having a top surface level with a top surface of the gate structure, wherein the capacitor extends under the first source/drain region and the second source/drain region in a first direction perpendicular to a major surface of the semiconductor substrate in a first cross-sectional view.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/747,694Filed 18 May 2022

Priority

15 Jun 2020

Published

8 Sep 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10B 12/33
DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells: the capacitor extending under the transistor
H10B 12/036
Making the capacitor or connections thereto: the capacitor extending under the transistor
H10B 12/05
For one transistor one-capacitor [1T-1C] memory cells: making the transistor
H10D 1/042
Of capacitors having no potential barriers: using deposition processes to form electrode extensions

Memory Cell and Method

Life of this patent

Memory Cell and Method

Life of this patent

Abstract

Claims20