Composite power element

A composite power element, comprising:

• a substrate structure including a base layer and an epitaxial layer formed on the base layer;
• wherein at least one trench is concavely formed on the epitaxial layer, the substrate structure defines a transistor formation region and a circuit element formation region that is adjacent to the transistor formation region along a length direction of the substrate structure, and the trench is located in the transistor formation region;
• an insulation layer being extendingly formed on the epitaxial layer and an inner wall of the trench;
• wherein a portion of the insulation layer located on the inner wall of the trench is defined as a trench insulation layer, the trench insulation layer surroundingly forms a groove, and a portion of the insulation layer located on a surface of the epitaxial layer is defined as a cover insulation layer;
• a dielectric layer being formed on the cover insulation layer;
• a metal-oxide-semiconductor field-effect transistor being located in the transistor formation region and including:
• a gate filling structure being formed in the groove of the trench insulation layer;
• a matrix doping structure being formed in the epitaxial layer and located in a surrounding area of the trench, and the matrix doping structure being covered by the cover insulation layer;
• a source metal structure being formed on the dielectric layer and sequentially passing through the dielectric layer and the cover insulation layer to be in contact with the matrix doping structure;
• and
• a drain metal structure being formed on a bottom surface of the base layer;
• and
• a Zener diode being located in the circuit element formation region and including:
• a Zener diode doping structure being formed in the epitaxial layer and being covered by the cover insulation layer;
• wherein the Zener diode doping structure includes a first P-type doped region and a first N-type doped region;
• and
• a Zener diode metal structure being formed on the dielectric layer and sequentially passing through the dielectric layer and the cover insulation layer to be in contact with the first P-type doped region and the first N-type doped region of the Zener diode doping structure, so that the Zener diode is capable of receiving a reverse bias voltage when the composite power element is energized.