Electrostatic discharge protection device

An ESD protection device, comprising:

• an active area on a substrate;
• an emitter region within the active area;
• a collector region within the active area;
• and
• a deep trench isolation structure (DTI) between the emitter region and the collector region, wherein a first side of the emitter region is in contact with a first side of the DTI, and wherein a first side of the collector region is in contact with a second side of the DTI.

A method of making a semiconductor device, comprising:

• manufacturing a P-doped well in a substrate;
• manufacturing a P-doped region in the substrate around a perimeter of the P-doped well;
• manufacturing an active area for the semiconductor device;
• manufacturing gate structures over the active area of the semiconductor device;
• manufacturing, in the active area, a collector region and an emitter region;
• manufacturing a deep trench isolation structure (DTI) between the collector region and the emitter region;
• manufacturing an isolation region around the active area;
• and
• electrically connecting the emitter region to the P-doped region in the substrate.