Semiconductor device package having galvanic isolation and method therefor

A method of manufacturing a semiconductor device, the method comprising:

• providing a package substrate including a first inductive coil formed from a first conductive layer formed at a first major side of the package substrate and a second inductive coil formed from a second conductive layer formed at a second major side of the package substrate, the first conductive layer and the second conductive layer separated by a non-conductive material;
• attaching a first semiconductor die to the first major side of the package substrate, the first semiconductor die conductively interconnected to the first inductive coil;
• attaching a second semiconductor die attached to the first major side of the package substrate;
• and
• forming a first wireless communication link between the first semiconductor die and the second semiconductor die including the first and second inductive coils.

A semiconductor device comprising:

• a package substrate including a first inductive coil formed from a first conductive layer formed at a first major side of the package substrate and a second inductive coil formed from a second conductive layer formed at a second major side of the package substrate, the first conductive layer and the second conductive layer separated by a non-conductive material;
• a first semiconductor die attached to the first major side of the package substrate, the first semiconductor die conductively interconnected to the first inductive coil;
• a second semiconductor die attached to the first major side of the package substrate;
• and
• a first wireless communication link between the first semiconductor die and the second semiconductor die formed by way of the first and second inductive coils.

A semiconductor device comprising:

• a package substrate having a first major side and a second major side;
• a first semiconductor die attached to the first major side of the package substrate, the first semiconductor die configured for operation in a first voltage domain;
• a second semiconductor die attached to the first major side of the package substrate, the second semiconductor die configured for operation in a second voltage domain, the first voltage domain having voltage values different from the second voltage domain;
• a first inductive coil formed at the first major side of the package substrate, the first inductive coil conductively interconnected to the first semiconductor die;
• and
• a second inductive coil formed at the second major side of the package substrate and substantially aligned with the first inductive coil, a first wireless communication link between the first semiconductor die and the second semiconductor die formed by way of the first and second inductive coils.

A semiconductor device comprising:

• a package substrate including a first inductive coil formed from a first conductive layer and a second inductive coil formed from a second conductive layer, the first conductive layer and the second conductive layer separated by a non-conductive material;
• a first semiconductor die attached to a first major side of the package substrate, the first semiconductor die conductively interconnected to the first inductive coil, the first semiconductor die configured for operation in a first voltage domain;
• a second semiconductor die attached to the first major side of the package substrate, the second semiconductor die configured for operation in a second voltage domain, the first voltage domain having voltage values different from the second voltage domain;
• and
• a first wireless communication link between the first semiconductor die and the second semiconductor die formed by way of the first and second inductive coils.