A 3d semiconductor device and structure with metal layers

A semiconductor device, the device comprising:

• a first silicon layer comprising a first single crystal silicon and a plurality of first transistors;
• a first metal layer disposed over said first silicon layer;
• a second metal layer disposed over said first metal layer;
• a third metal layer disposed over said second metal layer,
• a second level comprising a plurality of second transistors, said second level disposed over said third metal layer;
• a fourth metal layer disposed over said second level;
• a fifth metal layer disposed over said fourth metal layer,
• wherein said fourth metal layer is aligned to said first metal layer with a less than 40 nm alignment error;
• and
• a via disposed through said second level,
• wherein said via has a diameter of less than 450 nm,
• wherein said fifth metal layer comprise global power distribution grid, and
• wherein a typical thickness of said fifth metal layer is greater than a typical thickness of said second metal layer by at least 50%.

A semiconductor device, the device comprising:

• a first silicon layer comprising a first single crystal silicon and a plurality of first transistors;
• a first metal layer disposed over said first silicon layer;
• a second metal layer disposed over said first metal layer;
• a third metal layer disposed over said second metal layer;
• a second level comprising a plurality of second transistors, said second level disposed over said third metal layer,
• a fourth metal layer disposed over said second level;
• a fifth metal layer disposed over said fourth metal layer,
• wherein said fourth metal layer is aligned to said first metal layer with a less than 40 nm alignment error;
• and
• a via disposed through said second level,
• wherein said via has a diameter of less than 450 nm,
• wherein at least one of said plurality of second transistors comprises a metal gate,
• wherein said fifth metal layer comprises a global power distribution grid, and
• wherein a typical thickness of said fifth metal layer is greater than a typical thickness of said second metal layer by at least 50%.