US 2022/0285302 A1 · SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

Abstract

A semiconductor device includes a first semiconductor structure including a first substrate, circuit devices on the first substrate, a lower interconnection structure on the circuit devices, and a lower bonding structure electrically connected to the lower interconnection structure, and a second semiconductor structure including a second substrate disposed on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to a lower surface of the second substrate, channel structures that penetrate the gate electrodes and extend in the first direction, and an upper bonding structure electrically connected to the gate electrodes and the channel structures and bonded to the lower bonding structure. The second semiconductor structure further includes a first via connected to an upper portion of the second substrate, a second via spaced apart from the first via and the second substrate, and a contact plug.

Claims20

Dependent claims

A semiconductor device, comprising:

a first semiconductor structure comprising a first substrate, circuit devices on the first substrate, a lower interconnection structure on the circuit devices, and a lower bonding structure electrically connected to the lower interconnection structure;
and
a second semiconductor structure comprising a second substrate on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to a lower surface of the second substrate, channel structures that penetrate the gate electrodes and extend in the first direction, and an upper bonding structure electrically connected to the gate electrodes and the channel structures and bonded to the lower bonding structure, wherein the second semiconductor structure further comprises a first via connected to an upper portion of the second substrate, a second via spaced apart from the first via and spaced apart from the second substrate, and a contact plug in direct contact with the second via in an external side region of the second substrate.

A semiconductor device, comprising:

a first substrate;
circuit devices on the first substrate;
a lower interconnection structure electrically connected to the circuit devices;
a lower bonding structure electrically connected to the lower interconnection structure;
an upper bonding structure in contact with the lower bonding structure;
an upper interconnection structure electrically connected to the upper bonding structure;
a second substrate on the upper interconnection structure;
gate electrodes between the upper interconnection structure and the second substrate, wherein the gate electrodes are stacked and are spaced apart from each other;
channel structures that penetrate the gate electrodes, wherein each of the channel structures comprises a channel layer;
a contact plug that extends in a vertical direction perpendicular to an upper surface of the first substrate in an external side region of the gate electrodes and an external side region of the second substrate, wherein the contact plug comprises an upper end having a width smaller than a width of a lower end;
and
a landing via with a lower end in direct contact with the upper end of the contact plug and with an upper end on a level higher than a level of an upper surface of the second substrate,
wherein the landing via is spaced apart from the second substrate.

10 more elements

A data storage system, comprising:

a semiconductor storage device comprising a first substrate, circuit devices on the first substrate, a lower interconnection structure electrically connected to the circuit devices, a lower bonding structure electrically connected to the lower interconnection structure, an upper bonding structure in contact with the lower bonding structure, an upper interconnection structure electrically connected to the upper bonding structure, a second substrate on the upper interconnection structure, gate electrodes between the upper interconnection structure and the second substrate and stacked and spaced apart from each other, channel structures that penetrate the gate electrodes and each comprise a channel layer, a contact plug that extends in a vertical direction perpendicular to an upper surface of the first substrate in an external side region of the gate electrodes and an external side region of the second substrate, and has an upper end with a width that is smaller than a width of a lower end, a landing via with a lower end in direct contact with the upper end of the contact plug, with an upper end on a level higher than a level of an upper surface of the second substrate, and spaced apart from the second substrate, and an input/output pad in contact with the landing via and electrically connected to the circuit devices through the contact plug;
and
a controller electrically connected to the semiconductor storage device through the input/output pad,
wherein the controller is configured to control the semiconductor storage device.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and data storage system including the same

Life of this patent

Semiconductor device and data storage system including the same

Life of this patent

Abstract

Claims20