Silicon Carbide Device and Method for Forming a Silicon Carbide Device

A power semiconductor device, comprising:

• a semiconductor substrate having a first surface, the semiconductor substrate comprising a monocrystalline semiconductor material selected from a group consisting of SiC, GaN, MN and Ga2O3;
• an insulation layer on the first surface of the semiconductor substrate, the insulation layer comprising a plurality of openings extending through the insulation layer;
• and
• a front metallization on the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate;
• the front metallization extending through the respective openings of the insulation layer and forming respective metal connections arranged in the respective openings of the insulation layer, the metal connections forming respective electrical connections to the semiconductor substrate;
• wherein the front metallization comprises one or more metals and/or metal alloys having a melting temperature higher than 1100° C.

A power semiconductor device, comprising:

• a semiconductor substrate comprising a wide bandgap semiconductor material;
• an insulation layer above the first surface of the semiconductor substrate, the insulation layer comprising at least one opening extending through the insulation layer in a vertical direction;
• a contact layer located on the silicon carbide substrate, arranged within the opening, and forming an ohmic connection to the semiconductor substrate;
• a barrier layer structure disposed on the contact layer, and arranged within the opening;
• and
• a front metallization above the insulation layer and being electrically conductively connected to the semiconductor substrate via the contact layer and the barrier layer structure arranged within the opening,
• wherein the front metallization comprises at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate, and
• wherein the front metallization is configured as a contact pad of the semiconductor device.