Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a stacked die comprising:
• a lower portion comprising a first semiconductor substrate, a first interconnect structure overlying the first semiconductor substrate, a first conductive pad over the first interconnect structure, a first conductive connector directly landing on the first conductive pad, and a first patterned dielectric layer overlying the first interconnect structure and covering the first conductive pad and the first conductive connector;
• and
• an upper portion stacked upon the lower portion, the upper portion comprising a second semiconductor substrate, a second interconnect structure underlying the second semiconductor substrate, a second conductive connector underlying the second interconnect structure and bonded to the first conductive connector, and a second patterned dielectric layer below the second semiconductor substrate and bonded to the first patterned dielectric layer;
• and
• a through substrate via passing through the second semiconductor substrate and extending into the second interconnect structure, and the through substrate via being electrically coupled to the lower portion through the upper portion.

A semiconductor structure, comprising:

• a stacked die comprising:
• a lower portion comprising a first interconnect structure overlying a semiconductor substrate, a first conductive pad over the first interconnect structure, a first conductive connector extending towards the first conductive pad and electrically coupled to the first interconnecting structure, and a first patterned dielectric layer overlying the first interconnect structure and covering the first conductive pad and the first conductive connector;
• and
• an upper portion comprising a second patterned dielectric layer fused to the first patterned dielectric layer, and a second conductive connector covered by the second patterned dielectric layer and fused to the first conductive connector.