Modified fuse structure and method of use

An integrated circuit structure comprising:

• a first dielectric antifuse structure on an active area;
• wherein the first dielectric antifuse structure comprises:
• a first dielectric antifuse electrode,
• a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode,
• a first dielectric composition between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and
• a first programming transistor electrically connected to a first bit line electrode, a first word line electrode, and the second dielectric antifuse electrode;
• and
• a second dielectric antifuse structure on the active area;
• wherein the second dielectric antifuse structure comprises:
• a third dielectric antifuse electrode,
• a fourth dielectric antifuse electrode extending parallel to the third dielectric antifuse electrode,
• a second dielectric composition between the third dielectric antifuse electrode and the fourth dielectric antifuse electrode, and
• a second programming transistor electrically connected to a second bit line electrode, a second word line electrode, and the fourth dielectric antifuse electrode;
• and
• wherein when the first dielectric antifuse electrode is connected to a programming voltage, the programming voltage induces a breakdown in the first dielectric composition and establishes an electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and
• wherein when the third dielectric antifuse electrode is connected to the programming voltage, the programming voltage induces a breakdown in the second dielectric composition and establishes an electrical connection between the third dielectric antifuse electrode and the fourth dielectric antifuse electrode.

A method for programming a semiconductor device comprising:

• obtaining a semiconductor device comprising a plurality of integrated dielectric antifuse circuits, wherein each of the integrated dielectric antifuse circuits comprises:
• a first dielectric antifuse electrode;
• a second dielectric antifuse electrode adjacent and parallel to the first dielectric antifuse electrode, a portion of the second dielectric antifuse electrode overlapping a portion of the first dielectric antifuse electrode;
• a dielectric separating the overlapping portions of the first dielectric antifuse electrode and the second dielectric antifuse electrode;
• and
• applying a programming voltage to a first set of integrated antifuse circuits,
• wherein the programming voltage induces a breakdown of the dielectric to form a resistive direct electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode of each of the first set of integrated antifuse circuits to produce a programmed semiconductor device.