US 2022/0285266 A1 · NOVEL SELF-ALIGNED VIA STRUCTURE BY SELECTIVE DEPOSITION

Abstract

In one embodiment, a self-aligned via is presented. In one embodiment, an inhibitor layer is selectively deposited on the lower conductive region. In one embodiment, a dielectric is selectively deposited on the lower conductive region. In one embodiment, the deposited dielectric may be selectively etched. In one embodiment, an inhibitor is selectively deposited on the lower dielectric region. In one embodiment, a dielectric is selectively deposited on the lower dielectric region. In one embodiment, the deposited dielectric over the lower conductive region has a different etch rate than the deposited dielectric over the lower dielectric region which may lead to a via structure that is aligned with the lower conductive region.

Claims20

Dependent claims

A semiconductor device comprising one or more multilayer interconnections, comprising:

two or more first level conductors one or more second level conductors separated by a first dielectric material, and at least one via conductor extending through the first dielectric material and coupling at least one second level conductor to at least one first level conductor;
wherein a lateral width of a lower portion of the at least one via conductor corresponds with a lateral width of the at least one first level conductor;
and
wherein a second first level conductor is covered by a second dielectric material, wherein the second dielectric material is a different dielectric material than the first dielectric material, and wherein the lateral width of the second dielectric material corresponds to the lateral width of the second first level conductor.

1 more element

Dependencies are inferred from the claim text.

Novel self-aligned via structure by selective deposition

Life of this patent

Novel self-aligned via structure by selective deposition

Life of this patent

Abstract

Claims20