Integrated circuit structure of capacitive device

An integrated circuit structure, comprising:

• a first capacitor structure, disposed in a first layer on a semiconductor substrate;
• a second capacitor structure, adjacent to the first capacitor structure in the first layer;
• a first conductive plate, disposed in the first layer at one end of the second capacitor structure;
• and
• a second conductive plate disposed in a second layer on the semiconductor substrate and extending to the other end of the second capacitor structure from the one end of the second capacitor structure.

A method of manufacturing an integrated circuit structure, comprising:

• forming a first capacitor structure in a first layer on a semiconductor substrate;
• forming a second capacitor structure, adjacent to the first capacitor structure in the first layer;
• forming a first conductive plate in the first layer at one end of the second capacitor structure;
• and
• forming a second conductive plate disposed in a second layer on the semiconductor substrate and extending to the other end of the second capacitor structure from the one end of the second capacitor structure.