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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Yang Hsiao, Hsiang-Ku Shen, Dian-Hau Chen, Hsiao Ching-Wen, Yao-Chun Chuang
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A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.
An integrated circuit structure comprising:
A device, comprising:
A method, comprising:
Dependencies are inferred from the claim text.