Metallization structure of distributed gate drive for improving monolithic fet robustness

A semiconductor device, comprising:

• a semiconductor die formed with a plurality of transistor arrays forming a monolithic power stage or point-of-load device;
• a routing metallic layer electrically coupled to each gate of each transistor of said plurality of transistor arrays;
• and
• a plurality of gate drivers positioned along a periphery of said semiconductor die and electrically coupled to each gate of each transistor of said plurality of transistor arrays through said routing metallic layer.