Interconnects on multiple sides of a semiconductor structure

A semiconductor structure, comprising:

• a stacked front-end-of-line region, the stacked front-end-of-line comprising a first front-end-of-line region comprising two or more devices and a second front-end-of-line region comprising two or more devices;
• a first back-end-of-line region on a first side of the stacked front-end-of-line region, the first back-end-of-line region comprising a first set of interconnects for at least a first subset of the two or more devices in at least one of the first front-end-of-line region and the second front-end-of-line region of the stacked front-end-of-line region;
• a second back-end-of-line region on a second side of the stacked front-end-of-line region opposite the first side of the stacked front-end-of-line region, the second back-end-of-line region comprising a second set of interconnects for at least a second subset of the two or more devices in at least one of the first front-end-of-line region and the second front-end-of-line region of the stacked front-end-of-line region;
• and
• one or more passthrough vias disposed in the stacked front-end-of-line region, each of the one or more passthrough vias passing through the first front-end-of-line region and the second front-end-of-line region, at least one of the one or more passthrough vias connecting at least one of the first set of interconnects of the first back-end-of-line region to at least one of the second set of interconnects of the second back-end-of-line region.

An integrated circuit, comprising:

• a semiconductor structure comprising two or more devices;
• a first set of interconnects for the two or more devices on a first side of the semiconductor structure;
• a second set of interconnects for the two or more devices on a second side of the semiconductor structure opposite the first side of the semiconductor structure;
• and
• one or more passthrough vias disposed in the semiconductor structure, at least one of the one or more passthrough vias extending from the first side of the semiconductor structure to the second side of the semiconductor structure connecting one or more first interconnects on a first side of the semiconductor structure and one or more second interconnects on a second side of the semiconductor structure opposite the first side of the semiconductor structure.

A method comprising:

• forming two or more devices in a semiconductor structure;
• forming one or more passthrough vias in the semiconductor structure;
• forming a first set of interconnects on a first side of the semiconductor structure;
• and
• forming a second set of interconnects on a second side of the semiconductor structure;
• wherein at least one of the one or more passthrough vias connects at least one of the first set of interconnects and at least one of the second set of interconnects.

A method, comprising:

• performing first front-end-of-line processing to form two or more devices in a first front-end-of-line region of a semiconductor structure;
• performing second front-end-of-line processing to form two or more devices in a second front-end-of-line region of the semiconductor structure;
• forming one or more passthrough vias in the first front-end-of-line region of the semiconductor structure and the second front-end-of-line region of the semiconductor structure;
• performing first back-end-of-line processing to form a first set of interconnects on a first side of the semiconductor structure;
• and
• performing second back-end-of-line processing to form a second set of interconnects on a second side of the semiconductor structure opposite the first side of the semiconductor structure;
• wherein at least one of the one or more passthrough vias connects at least one of the first set of interconnects and at least one of the second set of interconnects.