Vertical transistors with gate connection grid

A semiconductor device comprising:

• a semiconductor region;
• an active region disposed in the semiconductor region;
• an isolation region disposed in the semiconductor region, the isolation region at least partially surrounding the active region;
• a plurality of vertical transistor segments disposed in the active region, the plurality of vertical transistor segments including respective gate electrodes;
• a first dielectric layer disposed on the active region;
• an electrically conductive grid disposed on the first dielectric layer, the electrically conductive grid being electrically coupled with the respective gate electrodes using a plurality of conductive contacts formed through the first dielectric layer;
• a second dielectric layer disposed on the electrically conductive grid and the first dielectric layer;
• and
• a metal layer disposed on the second dielectric layer, the metal layer including a portion that is electrically coupled with the respective gate electrodes through the electrically conductive grid using at least one conductive contact to the electrically conductive grid formed through the second dielectric layer.

A method for producing a semiconductor device, the method comprising:

• forming, in a semiconductor region, a vertical transistor including:
• a first transistor segment having a first body region, a first source region, and a first gate electrode;
• a second transistor segment having a second body region, a second source region, and a second gate electrode;
• forming a first dielectric layer on the vertical transistor;
• forming an electrically conductive grid on the first dielectric layer, the electrically conductive grid being electrically coupled with the first gate electrode and the second gate electrode using at least a first conductive contact formed through the first dielectric layer;
• forming a second dielectric layer on the electrically conductive grid and the first dielectric layer;
• and
• forming a metal layer on the second dielectric layer, the metal layer including:
• a first portion that is electrically coupled with the first body region, the first source region, the second body region, and the second source region using at least a second conductive contact formed through the first dielectric layer and the second dielectric layer;
• and
• a second portion that is electrically coupled with the electrically conductive grid using at least a third conductive contact formed through the second dielectric layer.