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US 2022/0285247 A1Published application
High voltage semiconductor device
AssigneeDB HiTek Co., Ltd.
InventorYang Hee SONG
Life of this patent
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Abstract
Disclosed is a high voltage semiconductor device. More particularly, the present disclosure relates to a semiconductor device capable of improving the breakdown voltage characteristics in an off-state and in an on-state by electrically connecting a first source metal to a source in a core region and in corner regions.
Claims17
A high voltage semiconductor device comprising:
- a substrate;
- a gate on the substrate;
- a body region in the substrate;
- a drift region in the substrate;
- a source in the body region;
- a drain in the drift region;
- a first source metal electrically connected to the source by a first source contact;
- and
- a first drain metal electrically connected to the drain by a first drain contact,
- wherein the first source metal has a portion in corner regions and a core region, and the first drain metal is spaced apart from the first source metal in the core region and is inside the gate.
7 more elements
A high voltage semiconductor comprising:
- a substrate;
- a gate on the substrate;
- a body region in the substrate;
- a drift region in the substrate;
- a source in the body region;
- a drain in the drift region;
- a first source metal electrically connected to the source by a first source contact, the first source metal extending to corner regions from a core region;
- a first drain metal electrically connected to the drain by a first drain contact;
- and
- a second drain metal above the first drain metal, and the second drain metal electrically connected to the first drain metal by a second drain contact,
- wherein the second drain metal extends up to one of the corner regions from the core region.
8 more elements
A high voltage semiconductor device comprising:
- a substrate;
- a gate on the substrate;
- a body region in the substrate;
- a drift region in the substrate;
- a source in the body region;
- a drain in the drift region;
- a first source metal electrically connected to the source by a first source contact, the first source metal extending to corner regions from a core region;
- a second source metal electrically connected to the first source metal by a second source contact;
- a third source metal electrically connected to the second source metal by a third source contact, wherein the third source metal is in the core region;
- and
- a first drain metal electrically connected to the drain by a first drain contact,
- wherein the third source metal overlaps at least a portion of the first drain metal.
9 more elements
Dependencies are inferred from the claim text.