Method for fabricating semiconductor device with protection layers
AssigneeNanya Technology Corporation
InventorsTSE-YAO HUANG, SHING-YIH SHIH
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Abstract
The present disclosure provides a method for fabricating a semiconductor device including performing a bonding process to bond a second die onto a first die, forming a first mask layer on the second die, forming a first opening along the first mask layer and the second die, and extending to the first die, forming isolation layers on sidewalls of the first opening, forming protection layers covering upper portions of the isolation layers, and forming a conductive filler layer in the first opening.
Claims20
A method for fabricating a semiconductor device, comprising:
- providing a first die;
- forming a first conductive feature in the first die;
- forming a second die on the first die;
- forming a first mask layer on the second die;
- forming a conductive filler layer along the first mask layer and the second die, extending to the first die, and contacting the first conductive feature;
- forming isolation layers between the conductive filler layer and the first die and between the conductive filler layer and the second die;
- and
- forming protection layers between the conductive filler layer and the first mask layer and covering upper portions of the isolation layers.
A method for fabricating a semiconductor device, comprising:
- providing a first die;
- forming a first conductive feature in the first die;
- forming a first mask layer on the first die;
- forming a conductive filler layer along the first mask layer, extending to the first die, and contacting the first conductive feature;
- forming isolation layers between the conductive filler layer and the first die and between the conductive filler layer and the first mask layer;
- and
- forming protection layers between the conductive filler layer and the isolation layers;
- wherein bottommost points of the protection layers are at a vertical level lower than a vertical level of a bottom surface of the first mask layer.
A method for fabricating a semiconductor device, comprising:
- performing a bonding process to bond a second die onto a first die;
- forming a first mask layer on the second die;
- forming a first opening along the first mask layer and the second die, and extending to the first die;
- forming isolation layers on sidewalls of the first opening;
- forming protection layers covering upper portions of the isolation layers;
- and
- forming a conductive filler layer in the first opening.
Dependencies are inferred from the claim text.