Subtractive metals and subtractive metal semiconductor structures

A process for fabricating a semiconductor structure, comprising:

• performing a degas operation on the semiconductor structure;
• depositing, by physical vapor deposition, an etch stop layer on the semiconductor structure after the degas operation;
• performing a sputter operation on the semiconductor structure;
• and
• depositing, by physical vapor deposition, a metal layer on the semiconductor structure after performing the sputter operation.

A process for fabricating an interconnect structure, comprising:

• performing a degas operation on a semiconductor structure, the semiconductor structure comprising a dielectric material and a via hole, the via hole at least partially filled with a metal material;
• depositing, by chemical vapor deposition, an etch stop layer on the semiconductor structure after the degas operation;
• and
• depositing, by physical vapor deposition, a metal layer on the semiconductor structure after depositing the etch stop layer to form the interconnect structure.