Conductive Feature of a Semiconductor Device and Method of Forming Same

A method of forming a semiconductor device, comprising:

• forming a first dielectric layer over a substrate;
• forming a first opening in the first dielectric layer to expose the substrate;
• forming a first conductive feature in the first opening, the first conductive feature comprising a metal;
• forming a second dielectric layer over the first dielectric layer and the first conductive feature, wherein upon forming the second dielectric layer, the second dielectric layer has a first concentration of exposed hydroxyl groups;
• forming a second opening in the second dielectric layer to expose the first conductive feature;
• flowing a monolayer precursor over the second dielectric layer to form a monolayer over the second dielectric layer, wherein upon forming the monolayer, the second dielectric layer has a second concentration of exposed hydroxyl groups, the second concentration being less than the first concentration;
• and
• flowing a metal precursor over the second dielectric layer to deposit a metal feature into the second opening and over the first conductive feature.

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric layer over a second dielectric layer, a conductive feature being embedded in the second dielectric layer, wherein upon forming the first dielectric layer, the first dielectric layer has a first concentration of exposed hydroxyl groups;
• patterning an opening in the first dielectric layer to expose the conductive feature;
• forming a hydrophobic layer over the first dielectric layer, the hydrophobic layer comprising a first portion along a top surface of the first dielectric layer and a second portion along sidewalls of the opening;
• selectively depositing a conductive material in the opening and over the conductive feature;
• removing the first portion of the hydrophobic layer;
• and
• forming metallization layers of an interconnect structure over and electrically connected to the conductive material.