Substrate processing apparatus including filling gas supply line and substrate processing method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByunghwan KONG, Heeyeon KIM, Homin SON, Geunkyu CHOI
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Abstract
A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.
Claims20
A substrate processing method comprising:
- disposing a wafer in a wafer region of a tube;
- injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and. the wafer disposed in the wafer region;
- and
- injecting a process gas into the wafer region of the tube,
- wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.
A substrate processing method comprising:
- disposing a wafer in a wafer region of a tube;
- injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region;
- and
- injecting a process gas into the wafer region of the tube,
- herein the injecting the inert gas into the gap region of the tube starts at a first time,
- wherein the injecting the process gas into the wafer region starts at a second time later than the first time.
A substrate processing method comprising:
- disposing a wafer in a wafer region of a tube;
- injecting an inert gas into a gap region, of the tube, between an inner side wail of the tube and the wafer;
- and
- injecting a process gas into the wafer region of the tube,
- wherein the gap region comprises a first region and a second region, wherein the first region is between a filling gas supply line and an exhaust hole of the tube, and wherein the second region is between a process gas supply line and the filling gas supply line,
- wherein the injecting the inert gas into the gap region of the tube comprises injecting the inert gas into the first region from the filling gas supply line.
Dependencies are inferred from the claim text.