Composition for removing photoresist

A composition for removing a photoresist after forming a circuit pattern, wherein the photoresist is for forming the circuit pattern on an insulation layer at least partially having a copper wiring, wherein the circuit pattern constitutes a connecting terminal portion of the copper wiring and comprises copper and at least one selected from the group consisting of tin and a tin alloy, wherein:

• the composition comprises an alkanolamine (A), a quaternary ammonium hydroxide (B), a sugar alcohol (C), a polar organic solvent (D) and water (E);
• with respect to the total amount of the composition, the content of the alkanolamine (A) is 2.5 to 50% by mass, the content of the quaternary ammonium hydroxide (B) is 0.5 to 4% by mass, and the content of the sugar alcohol (C) is 0.5 to 20% by mass;
• the polar organic solvent (D) is at least one selected from the group consisting of ethylene glycol monoethyl ether, 2-butoxyethanol, phenyl glycol, propylene glycol monoethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobulyl ether and diethylene glycol monophenyl ether;
• and
• the composition substantially does not contain an azole compound.