Back to results
US 2022/0285168 A1Published application
Method of manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRu-Gun LIU, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN, Ken-Hsien HSIEH, Chin-Hsiang LIN
Life of this patent
Estimating the term…
Abstract
In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a trench pattern in a first layer disposed over an underlying layer;
- and
- reducing a first dimension of the trench pattern by first directional deposition,
- wherein in the first directional deposition, a deposition rate on a first side wall of the trench pattern extending in a first axis is greater than a deposition rate on a second side wall of the trench pattern extending in a second axis crossing the first axis, the first axis and the second axis being horizontal and parallel to a surface of the underlying layer.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming a first opening pattern and a second opening pattern in a first layer disposed over an underlying layer, wherein the first opening pattern and the second opening pattern is connected at a bridge portion;
- and
- separating the first opening and the second opening by directional deposition,
- wherein in the first directional deposition, a deposition rate on a first side wall of the opening pattern extending in a first axis is greater than a deposition rate on a second side wall of the opening pattern extending in a second axis crossing the first axis, the first axis and the second axis being horizontal and parallel to a surface of the underlying layer.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming a resist pattern having a plurality of opening patterns over an underlying layer disposed over a substrate;
- forming a plurality of openings by etching the underlying layer through the plurality of opening patterns;
- extending the plurality of openings in the first axis by directional etching to form a plurality of groove patterns,
- wherein in the directional etching, an etching rate of the underlying layer along the first axis is greater than an etching rate of the underlying layer along a second axis perpendicular to the first axis, the second axis being horizontal and parallel to the surface of the substrate.
1 more element
Dependencies are inferred from the claim text.