Selective barrier metal etching

A method for forming a metal containing feature, the method comprising:

• performing a first etch process, in an inductively coupled plasma (ICP) etch chamber, to form a feature in a metal layer formed on a metal barrier layer, using an oxygen containing etching gas;
• performing a hydrogen implantation process, in the ICP etch chamber, to chemically reduce an oxidized portion of the barrier metal layer formed within the feature in the metal layer;
• and
• performing a second etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer by using a chlorine containing etching gas.

A metal containing structure, comprising:

• a barrier metal layer formed on a substrate;
• a metal feature formed on the barrier metal layer;
• and
• a dielectric feature formed on the metal feature, wherein
• the metal feature and the dielectric feature have a line width of between 5 nm and 12 nm.