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US 2022/0285165 A1Published application
Ultra Narrow Trench Patterning with Dry Plasma Etching
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsuan Chen, Yuan-Sheng Huang
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Abstract
A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
Claims20
A method comprising:
- forming a first mask layer over a target layer;
- forming a second mask layer over the first mask layer, wherein the second mask layer is patterned with an opening therein to reveal a first portion of the first mask layer, and wherein a second portion of the first mask layer is covered by the second mask layer;
- depositing a third mask layer comprising:
- a first part over the second mask layer;
- and
- a second part extending into the opening to contact the first mask layer;
- etching the third mask layer and the first mask layer, wherein after the etching, the first mask layer comprises:
- a remaining portion of the first portion, wherein portions of the first mask layer on opposite sides of the remaining portion are removed;
- and
- transferring patterns of the first mask layer into the target layer.
7 more elements
A method comprising:
- forming a first mask layer over a target layer;
- forming a second mask layer over the first mask layer, wherein the second mask layer is patterned with an opening therein to reveal a first portion of the first mask layer, and wherein a second portion of the first mask layer is covered by the second mask layer;
- depositing a polymer layer, wherein the polymer layer comprises:
- a first portion over the second mask layer;
- a sidewall portion on sidewalls of the second mask layer;
- and
- a second portion extending into the opening to contact the first mask layer;
- etching the polymer layer and the first mask layer, wherein after the etching, a remaining portion of the first mask layer is directly under the opening;
- etching a hard mask using the remaining portion of the first mask layer as a part of an etching mask;
- and
- etching the target layer using the hard mask to define pattern.
8 more elements
A method comprising:
- forming a patterned photoresist comprising an opening encircled by the patterned photoresist;
- forming a mask layer comprises:
- upper portions on top surfaces of the patterned photoresist;
- sidewall portions on sidewalls of the patterned photoresist;
- and
- a lower portion extending into the opening;
- etching the mask layer using an etching chemical, wherein in the etching, the upper portions, the sidewalls portions, and the lower portion of the mask layer are exposed to the etching chemical, and wherein after the etching, the upper portions and the sidewall portions are removed, and a middle part of the lower portion remains;
- and
- etching an underlying layer underlying the mask layer, with the mask layer being used as a part of an etching mask.
6 more elements
Dependencies are inferred from the claim text.