Plasma Etching Apparatus Component for Manufacturing Semiconductor Comprising Composite Sintered Body and Manufacturing Method Therefor

Abstract

Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO) and having plasma resistance. The plasma etching apparatus component for manufacturing a semiconductor provided in one aspect of the present invention has excellent corrosion resistance to plasma, and may have good corrosion resistance to plasma even when the composite sintered body is sintered at a relatively low relative density. In addition, the composite sintered body has a small crystal grain size and a small increase in surface roughness after etching, so that there is an effect that contaminant particles may be reduced. Furthermore, the plasma etching apparatus component for manufacturing a semiconductor has excellent strength compared to a typical plasma-resistant material, is inexpensive, and is excellent in terms of economic feasibility and utilization.

Dependencies are inferred from the claim text.