Semiconductor arrangement formation

A method of forming a semiconductor arrangement, comprising:

• removing a patterned photoresist from a top surface of a substrate;
• transferring the substrate to a wafer storage device;
• transferring the substrate from the wafer storage device to a first chamber;
• in the first chamber, forming a first dielectric layer over the top surface of the substrate;
• and
• transferring the substrate from the first chamber to the wafer storage device.

A method for forming a semiconductor arrangement, comprising:

• removing a patterned photoresist from a top surface of a substrate using a gas comprising fluoride, wherein:
• polymer residue from the patterned photoresist remains on the top surface of the substrate after removing the patterned photoresist;
• and
• fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist;
• transferring the substrate to a cleaning tank;
• cleaning the top surface of the substrate in the cleaning tank to remove the polymer residue;
• transferring the substrate to a chamber;
• and
• treating the substrate with nitrous oxide in the chamber to remove the fluoride residue.