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US 2022/0285146 A1Published application
Methods and systems for forming a layer comprising vanadium and nitrogen
AssigneeASM IP Holding B.V.
InventorsGiuseppe Alessio Verni, Ren-Jie Chang, Qi Xie, Timothee Blanquart, Eric Shero
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Abstract
Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.
Claims20
A method for forming a layer comprising a metal nitride on a substrate, the method comprising:
- providing the substrate in a reaction chamber;
- depositing a metal oxide on the substrate;
- and,
- exposing the substrate to a nitrogen-containing reactant, thereby converting the metal oxide to a metal nitride.
1 more element
Dependencies are inferred from the claim text.