Methods and apparatus for processing a substrate

An apparatus for processing a substrate, comprising:

• a processing chamber comprising a chamber body and a lid;
• a top delivery gas nozzle extending through the lid and configured to direct process gas toward a substrate support surface of a substrate support disposed within a processing volume of the processing chamber,
• a side delivery gas nozzle extending through the chamber body and configured to direct the process gas toward a side surface of the substrate support;
• a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber;
• and
• at least one of:
• a first orifice flow restrictor or a first needle valve connected to the first gas line;
• or
• a second orifice flow restrictor or a second needle valve connected to the second gas line.