Ion implanter and ion implantation method

Abstract

Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.

Dependencies are inferred from the claim text.