Photoelectric conversion element and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsShunsuke SHIMO, Kenji TODORI
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AssigneeKabushiki Kaisha Toshiba
InventorsShunsuke SHIMO, Kenji TODORI
Estimating the term…
According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.
A photoelectric conversion element, comprising:
A method for manufacturing a photoelectric conversion element, comprising:
Dependencies are inferred from the claim text.