Stacked inductor having a discrete metal-stack pattern
AssigneeQUALCOMM Incorporated
InventorsJonghae KIM, Changhan Hobie YUN, Je-Hsiung LAN, Ranadeep DUTTA
Life of this patent
Estimating the term…
Abstract
An inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
Claims20
An inductor, comprising:
- a first metallization layer multi-turn trace;
- a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via;
- and
- a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
A method for fabricating a stacked inductor having discrete metal-stack patterns, comprising:
- forming a first metallization layer multi-turn trace;
- forming a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via;
- and
- forming a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
A radio frequency front-end (RFFE) module comprising:
- a semiconductor die;
- and
- an integrated passive device (IPD) die coupled to the semiconductor die and comprising an inductor, the inductor comprising:
- a first metallization layer multi-turn trace,
- a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via, and
- a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
Dependencies are inferred from the claim text.