Circuitry for parallel set and reset of resistive random-access memory (reram) cells

A method for parallel reset and set programming of a resistive random-access memory (ReRAM) word of a ReRAM array, comprising:

• receiving a new word to be programmed into the ReRAM word of the ReRAM array, wherein the new word contains a plurality of bits, each bit being a ReRAM cell;
• comparing a content of the ReRAM word to be programmed to the received new word;
• determining, based on the comparison, a plurality of enable signals to each source line and bit line of the ReRAM word to be programmed;
• generating a mask to disable programming of a first portion of the plurality of bits of the ReRAM word that are not to be programmed and enable programming of a second portion of the plurality of bits of the ReRAM word that are to be programmed;
• performing parallel reset and set programming of the ReRAM word to be programmed while applying the mask;
• terminating programming upon checking the content of the ReRAM word that was programmed to be successful;
• and
• repeating programming upon determination that the content of the ReRAM word does not match the new word, wherein the repeating programming is performed using the received new word.