Active / Passive Control of Micro LED Performance Through Sidewall Gating

Abstract

Display structures and methods of operation with micro light emitting diode (LED) sidewall gating are described. In an embodiment, a display structure includes a vertically oriented micro LED mounted on a display substrate, in which the micro LED includes a p-n diode with top and bottom electrode sides, and a sidewall gate electrode spanning a sidewall of the p-n diode where the active layer is included. In various embodiments, a bias may be applied to the sidewall gate electrode while driving the micro LED to deplete a minority carrier concentration from the sidewall of the p-n diode.

Dependencies are inferred from the claim text.