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US 2022/0278207 A1Published application
Semiconductor device and method for producing same
AssigneeRohm Co., Ltd.
InventorYuu ENOMOTO
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer, a crystal defect region formed in the semiconductor layer, and an insulating layer formed on the semiconductor layer, composed of an insulator containing silicon, and including, in the insulator, an Si—H bond in which a dangling bond of silicon atom is hydrogen-terminated.
Claims20
A semiconductor device comprising:
- a semiconductor layer;
- a crystal defect region formed in the semiconductor layer;
- and
- an insulating layer formed on the semiconductor layer, composed of an insulator containing silicon, and including, in the insulator, an Si—H bond in which a dangling bond of silicon atom is hydrogen-terminated.
1 more element
A manufacturing method for a semiconductor device comprising steps of:
- preparing a wafer;
- forming an insulating layer composed of an insulator containing silicon on the wafer;
- forming a crystal defect region in the wafer by at least one of an ion irradiation method and an electron beam irradiation method after forming the insulating layer;
- and
- introducing a hydrogen ion into the insulating layer to hydrogen-terminate a dangling bond of a silicon atom in the insulating layer after forming the crystal defect region.
2 more elements
Dependencies are inferred from the claim text.