Method of manufacturing metal nitride film and electronic device including metal nitride film

An electronic device, comprising:

• a transistor;
• and
• a capacitor connected to the transistor,
• wherein the capacitor comprises
• a lower electrode including a metal nitride,
• a dielectric layer on the lower electrode, the dielectric layer including a metal oxide including at least one of Hf, Zr, Al, Nb, Ce, La, Ta, and Ti,
• an interfacial layer between the lower electrode and the dielectric layer, the interfacial layer including M, M′, N and O, wherein M is Ti and M′ is Si, and
• an upper electrode on the dielectric layer, the upper electrode including Ti and N.

An electronic device, comprising:

• a memory device including a plurality of memory cells;
• and
• a controller configured to read data from the memory device or to write data into the memory device,
• wherein each of the plurality of memory cells includes a transistor and a capacitor connected to the transistor,
• wherein the capacitor comprises
• a lower electrode including a metal nitride,
• a dielectric layer on the lower electrode, the dielectric layer including a metal oxide including at least one of Hf, Zr, Al, Nb, Ce, La, Ta, and Ti,
• an interfacial layer between the lower electrode and the dielectric layer, the interfacial layer including M, M′, N and O, wherein M is Ti and M′ is Si, and
• an upper electrode on the dielectric layer, the upper electrode including Ti and N.