Metal-insulator-metal capacitors and methods of forming the same

A method for fabricating a metal-insulator-metal (MIM) capacitor between a first conductive via and a second conductive via on an integrated circuit (IC) device, comprising:

• determining whether a package resonant frequency of the IC device is greater than a threshold frequency;
• determining a capacitance of the MIM capacitor based on a default plate count of electrode plates of the MIM capacitor and a default distance between the first conductive via and the second conductive via;
• increasing a plate count of the electrode plates of the MIM capacitor when the package resonant frequency of the IC device is not greater than the threshold frequency and the capacitance of the MIM capacitor does not meet a predetermined performance criteria;
• and
• decreasing a distance between the first conductive via and the second conductive via when the package resonant frequency of the IC device is greater than a first frequency and the capacitance of the MIM capacitor does not meet a design requirement of the MIM capacitor.

A method of fabricating an integrated circuit (IC) device comprising a metal-insulator-capacitor (MIM), comprising:

• forming a bottom electrode plate over a layer of insulating material;
• forming a first dielectric layer over the bottom electrode plate;
• forming a plurality of intermediate electrode plates over the first dielectric material layer, wherein each of the intermediate electrode plates has a thickness that is greater than a thickness of the bottom electrode plate;
• forming a second dielectric material layer over the plurality of intermediate electrode plates;
• forming a top electrode plate over the second dielectric material layer, wherein the top electrode plate has a thickness that is less than a thickness of each of the intermediate electrode plates;
• and
• forming a pair of conductive vias laterally adjacent to the electrode plates of the MIM capacitor, wherein each of the pair of conductive vias is conductively coupled to at least two electrode plates of the MIM capacitor.