Light emitting diode and method of forming a light emitting diode

A method of forming a LED array precursor comprising

• (a) forming a first semiconducting layer comprising a Group III-nitride on a substrate, the first semiconducting layer having a growth surface on an opposite side of the first semiconducting layer to the substrate;
• (b) selectively removing portions of the first semiconducting layer to form a plurality of mesa structures such that the growth surface of the first semiconducting layer comprises a plurality of mesa surfaces and a bulk semiconducting surface;
• (c) forming a monolithic LED array structure on the growth surface of the first semiconducting layer such that the monolithic LED array structure covers the mesa surfaces and the bulk semiconducting surface, the monolithic LED array structure comprising a plurality of layers, each layer comprising a Group III-nitride, including:
• an n-type semiconducting layer;
• an active layer provided on the n-type semiconducting layer, the active layer configured to generate light;
• and
• a p-type semiconducting layer provided on the active layer;
• wherein a potential barrier is provided between each mesa portion of the p-type semiconducting layer covering each mesa surface and a bulk portion of the p-type semiconducting layer covering the bulk semiconducting surface, the potential barrier surrounding each mesa portion of the p-type semiconducting layer covering the mesa surface.

A light emitting diode (LED) precursor comprising:

• a first semiconducting layer comprising a Group III-nitride, the first semiconducting layer including a mesa structure extending from a major surface of the first semiconducting layer to define a growth surface including a bulk semiconductor surface and a mesa surface;
• a monolithic LED structure provided on the growth surface of the first semiconducting layer such that the monolithic LED structure covers the mesa surface and the bulk semiconducting surface, the monolithic LED structure comprising a plurality of layers, each layer formed comprising a Group III-nitride, including:
• an n-type semiconducting layer;
• an active layer provided on the n-type semiconducting layer, the active layer configured to generate light;
• and
• a p-type semiconducting layer provided on the active layer;
• wherein a potential barrier is provided between a first portion of the p-type semiconducting layer covering the mesa surface and a second portion of the p-type semiconducting layer covering the bulk semiconducting surface, the potential barrier surrounding the first portion of the p-type semiconducting layer covering the mesa surface.