Imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorYusuke MATSUMURA
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AssigneeSony Semiconductor Solutions Corporation
InventorYusuke MATSUMURA
Estimating the term…
An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.
An imaging device comprising:
The imaging device according to claim 1, further comprising a floating diffusion section that is electrically coupled to a gate electrode of an amplification transistor that converts the charge into an electric signal, wherein
The imaging device according to claim 4, wherein the amplification transistor is provided on a substrate adhered to the semiconductor substrate.
Dependencies are inferred from the claim text.