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AssigneeSony Semiconductor Solutions Corporation
InventorToshihiro KUROBE
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A solid-state imaging device includes an amplification transistor having a gate electrode including first and second vertical gate electrode portions embedded in a depth direction from a substrate surface of a semiconductor substrate. In each of the first and second vertical gate electrode portions, a second electrode width at a second depth from the substrate surface is shorter than a first electrode width at a first depth from the substrate surface. The first depth is a position of a channel top surface closest to the substrate surface of a channel region between the first and second vertical gate electrode portions. The second depth is a position of a vertical gate electrode portion bottom surface farthest from the substrate surface of the first or second vertical gate electrode portion. Directions of the first and second electrode widths are the same as a direction of a channel width of the channel region.
A solid-state imaging device, comprising:
A solid-state imaging device, comprising:
A solid-state imaging device, comprising:
A solid-state imaging device, comprising:
A solid-state imaging device, comprising:
Dependencies are inferred from the claim text.