Pixel structure and image sensor

An image sensor, comprising:

• a plurality of pixel structures;
• wherein each of the plurality of pixel structures comprises:
• a metallic ground plane;
• a substrate unit cell, wherein the substrate unit cell is located on the metallic ground plane;
• a nano antenna unit, wherein the nano antenna unit is located on the substrate unit cell, and comprises one or more nano antennas, wherein each of the one or more nano antennas corresponds to one optical band, and comprises M parts, wherein a nano gap is formed between the M parts, wherein the M parts and the nano gap have a function of a metal-insulator-metal diode, and wherein M is a multiple of 2;
• and
• a packaging unit, wherein the packaging unit covers the nano antenna unit.

An electronic product, comprising an image sensor, wherein the image sensor comprises:

• a plurality of pixel structures;
• wherein each of the plurality of pixel structures comprise:
• a metallic ground plane;
• a substrate unit cell, wherein the substrate unit cell is located on the metallic ground plane;
• a nano antenna unit, wherein the nano antenna unit is located on the substrate unit cell, and comprises one or more nano antennas, wherein each of the one or more nano antennas corresponds to one optical band, and comprises M parts, wherein a nano gap is formed between the M parts, wherein the M parts and the nano gap have a function of a metal-insulator-metal diode, and wherein M is a multiple of 2;
• and
• a packaging unit, wherein the packaging unit covers the nano antenna unit.