Ferroelectric Memory Device and Method of Manufacturing the Same

A device comprising:

• a transistor disposed over a substrate;
• a ferroelectric memory stack disposed over the substrate, wherein the ferroelectric memory stack includes:
• a first electrode and a second electrode, and
• a ferroelectric switching layer (FSL) stack disposed between the first electrode and the second electrode, wherein the FSL stack includes a first FSL, a second FSL, and a barrier layer disposed between the first FSL and the second FSL, wherein a first crystalline condition of the barrier layer is different than a second crystalline condition of the first FSL and the second FSL;
• and
• an interconnect structure disposed over the substrate, wherein the interconnect structure is electrically connected to the transistor and the ferroelectric memory stack.

A method for forming a ferroelectric memory stack, the method comprising:

• forming a first electrode layer over a substrate;
• forming a first ferroelectric dielectric layer over the first electrode layer, wherein the first ferroelectric dielectric layer has a first crystalline condition;
• forming a dielectric layer over the first ferroelectric dielectric layer, wherein the dielectric layer has a second crystalline condition and the second crystalline condition is different than the first crystalline condition;
• forming a second ferroelectric dielectric layer over the dielectric layer, wherein the second ferroelectric dielectric layer has a third crystalline condition and the second crystalline condition is different than the third crystalline condition;
• and
• forming a second electrode layer over the second ferroelectric dielectric layer.