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US 2022/0277993 A1Published application
Contact structure of a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoanna Chaw Yane YIN, Hua Feng CHEN
Life of this patent
Estimating the term…
Abstract
Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.
Claims20
A fin-type field effect transistor (FinFET), comprising:
- a fin extending from a semiconductor substrate;
- a gate structure formed over the fin and a source/drain region adjacent the gate structure;
- and
- a first contact structure over the gate structure and extending to interface a top surface of the gate structure, wherein the first contact structure includes:
- a liner layer having a first thickness at an upper portion of a sidewall of the first contact structure and a second thickness at a bottom portion of the sidewall of the first contact structure, wherein the second thickness is greater than the first thickness;
- and
- a conductive fill layer over the liner layer.
4 more elements
A semiconductor device, comprising:
- a first fin extending in a first direction;
- a gate structure extending over the first fin and a source/drain region adjacent the gate structure;
- and
- a first contact structure over the gate structure and extending to interface a surface of the gate structure, wherein the first contact structure includes an upper portion and a lower portion:
- wherein the upper portion includes a liner layer having a first thickness;
- and
- wherein the lower portion includes the liner layer having a second thickness, wherein the second thickness is greater than the first thickness, and wherein the liner layer of the lower portion has a first surface and a second surface opposing the first surface, the first surface completely interfacing the gate structure;
- and
- a conductive fill layer over the liner layer and extending from the upper portion and the lower portion, wherein the second surface of the liner layer of the lower portion interfaces the conductive fill layer.
6 more elements
A semiconductor device, comprising:
- a first fin extending in a first direction;
- a gate structure formed over the first fin and a source/drain region adjacent the gate structure;
- and
- a first contact structure over the gate structure and extending to interface a surface of the gate structure, wherein the first contact structure includes:
- a liner layer having a first thickness at an upper portion a sidewall of the first contact structure and a second thickness at a bottom portion of the sidewall of the first contact structure, wherein the second thickness is greater than the first thickness;
- and
- a conductive fill layer over the liner layer;
- and
- wherein the first contact structure has a width between approximately 15 nanometers and approximately 50 nanometers.
6 more elements
Dependencies are inferred from the claim text.