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US 2022/0277992 A1Published application
Semiconductor structure
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsHao ZHANG, Xuezhen JING, Jingjing TAN, Tiantian ZHANG, Zhangru XIAO, Zengsheng XU
Life of this patent
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Abstract
The semiconductor structure includes a substrate; a dielectric layer formed on the substrate; an opening, formed through the dielectric layer; a contact layer formed at bottom of the opening; a blocking layer formed on a sidewall surface of the opening; and a plug formed in the opening. The plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.
Claims9
A semiconductor structure, comprising:
- a substrate;
- a dielectric layer formed on the substrate;
- an opening, formed through the dielectric layer;
- a contact layer formed at bottom of the opening;
- a blocking layer formed on a sidewall surface of the opening;
- and
- a plug formed in the opening, wherein the plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.
4 more elements
Dependencies are inferred from the claim text.