US 2022/0277129 A1Published application

Method, apparatus and device for measuring semiconductor structure

AssigneeChangxin Memory Technologies, Inc.

InventorsXin HUANG, Shih-Shin WANG

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Abstract

Embodiments of this application provide a method, an apparatus and a device for measuring a semiconductor structure. Before measurement of a to-be-measured semiconductor structure, a reference semiconductor structure corresponding to the to-be-measured semiconductor structure is set, and a first simulation model corresponding to the to-be-measured semiconductor structure and a second simulation model corresponding to the reference semiconductor structure are established, some structure parameters of the to-be-measured semiconductor structure have parameter values different from those of corresponding structure parameters of the reference semiconductor structure. During measurement of the to-be-measured semiconductor structure, both the to-be-measured semiconductor structure and the reference semiconductor structure are simultaneously measured by using an OCD measurement technology, to find structure parameters that can satisfy both the first simulation model and the second simulation model, and parameter value of each structure parameter finally determined for the first simulation model is used as structure parameter of the to-be-measured semiconductor structure.

Claims18

Dependent claims

A method for measuring a semiconductor structure, comprising:

establishing a first simulation model corresponding to a to-be-measured semiconductor structure and a second simulation model corresponding to a reference semiconductor structure, wherein at least one first structure parameter of the to-be-measured semiconductor structure has a same parameter value as a corresponding first structure parameter of the reference semiconductor structure, and at least one second structure parameter of the to-be-measured semiconductor structure has a parameter value different from a parameter value of a corresponding second structure parameter of the reference semiconductor structure;
measuring spectra of both the to-be-measured semiconductor structure and the reference semiconductor structure to obtain a first standard spectrum and a second standard spectrum;
and
adjusting first structure parameters and second structure parameters of the first simulation model and the second simulation model, and when each of the adjusted first structure parameters of the first simulation model and the second simulation model is the same, and a spectrum obtained by fitting based on the adjusted first simulation model and a spectrum obtained by fitting based on the adjusted second simulation model successfully match the first standard spectrum and the second standard spectrum, respectively, determining parameter value of each structure parameter of the adjusted first simulation model as parameter value of each structure parameter of the to-be-measured semiconductor structure.

1 more element

An apparatus for measuring a semiconductor structure, comprising:

a model establishment module, configured to establish a first simulation model corresponding to a to-be-measured semiconductor structure and a second simulation model corresponding to a reference semiconductor structure, wherein at least one first structure parameter of the to-be-measured semiconductor structure has a same parameter value as a corresponding first structure parameter of the reference semiconductor structure, and at least one second structure parameter of the to-be-measured semiconductor structure has a parameter value different from a parameter value of a corresponding second structure parameter of the reference semiconductor structure;
a measurement module, configured to measure spectra of both the to-be-measured semiconductor structure and the reference semiconductor structure to obtain a first standard spectrum and a second standard spectrum;
and
an adjustment module, configured to adjust first structure parameters and second structure parameters of the first simulation model and the second simulation model, and when each of the adjusted first structure parameters of the first simulation model and the second simulation model is the same, and a spectrum obtained by fitting based on the adjusted first simulation model and a spectrum obtained by fitting based on the adjusted second simulation model successfully match the first standard spectrum and the second standard spectrum, respectively, determine parameter value of each structure parameter of the adjusted first simulation model as parameter value of each structure parameter of the to-be-measured semiconductor structure.

1 more element

Dependencies are inferred from the claim text.