Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof
AssigneePeking University
InventorsXia AN, Zhexuan REN, Gensong LI, Xing ZHANG, Ru HUANG
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Abstract
A method for characterizing a fluctuation induced by single particle irradiation in a device. A plurality of devices varying in size are tested respectively before and after irradiation to obtain threshold voltage distribution, such that a threshold voltage fluctuation induced by irradiation is obtained and used to correct a process fluctuation model, so as to correct a design margin of the devices working under the irradiation.
Claims8
A method for characterizing a fluctuation induced by single particle irradiation in a device, comprising:
estimating a total radiation flux over a life cycle of a plurality of devices to be evaluated and a particle type according to an application requirement;
- wherein the plurality of devices to be evaluated vary in size;
- 2) testing the plurality of devices to be evaluated to plot a pre-irradiation transfer characteristic curve (ID-VG)pre of the plurality of devices to be evaluated;
- 3) subjecting the plurality of devices to be evaluated to single particle irradiation;
- and testing the plurality of devices to be evaluated to obtain a post-irradiation transfer characteristic curve (ID-VG)post of the plurality of devices to be evaluated;
- 4) extracting a threshold voltage VTpre of each of the plurality of devices to be evaluated before irradiation;
- calculating a standard deviation σΔVT of a threshold voltage deviation of each of the plurality of devices to be evaluated before irradiation;
- extracting a threshold voltage VTpost of each of the plurality of devices to be evaluated after irradiation;
- and calculating a standard deviation σΔVT of a threshold voltage deviation of each of the plurality of devices to be evaluated after irradiation;
- 5) plotting a Pelgrom diagram
- σ
- Δ
-
- V
-
- T
- ∼
- 1
- W
-
- L
- or a threshold voltage fluctuation of the plurality of devices to be evaluated before irradiation;
- and plotting a Pelgrom diagram
- σ
- Δ
-
- V
-
- T
- ∼
- 1
- W
-
- L
- of a threshold voltage fluctuation of the plurality of devices to be evaluated after irradiation, wherein W is an equivalent gate width of a corresponding device;
- and L is an equivalent gate length of the corresponding device;
- and
- 6) calculating a fluctuation σSEE (WL) induced by irradiation in each of the plurality of devices to be evaluated according to the Pelgrom diagram of the threshold voltage fluctuation of the plurality of devices to be evaluated before irradiation and the Pelgrom diagram of the threshold voltage fluctuation of the plurality of devices to be evaluated after irradiation.
Dependencies are inferred from the claim text.