Imaging devices with gated time-of-flight pixels with fast charge transfer

A system, comprising:

• a light source;
• and
• an imaging device, including:
• a pixel array including a plurality of pixels, each pixel including:
• a photoelectric conversion region that converts incident light into electric charge;
• and
• a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view, the charge transfer section including:
• a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region;
• and
• a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.

A system, comprising:

• a light source;
• an imaging device, including:
• a pixel array including a plurality of pixels, each pixel including:
• a photoelectric conversion region that converts incident light into electric charge;
• and
• a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view, the charge transfer section including:
• a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region;
• and
• a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region;
• and
• a signal processor configured to determine a distance to an object based on the electric charge.