Sample well fabrication techniques and structures for integrated sensor devices
AssigneeQuantum-Si Incorporated
InventorsGerard Schmid, James Beach
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Abstract
Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.
Claims34
A method of forming an integrated device, the method comprising:
- forming a metal stack over a cladding layer;
- forming an aperture in the metal stack;
- forming first spacer material within the aperture;
- and
- forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer, wherein at least one portion of the first spacer material is in contact with at least one layer of the metal stack.
A method of forming an integrated device, the method comprising:
- forming a metal stack over a cladding layer;
- forming a dielectric layer over the metal stack;
- forming an aperture in the metal stack by forming an opening in the dielectric layer and using the dielectric layer as a mask in removing a portion of the metal stack;
- and
- forming a sample well by removing a portion of the cladding layer, wherein at least a portion of dielectric layer is removed while forming the sample well.
34-42. (canceled)
Dependencies are inferred from the claim text.