Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first insulating layer, an oxide semiconductor disposed on the first insulating layer, a second insulating layer which covers the oxide semiconductor and a gate electrode disposed on the second insulating layer and overlapping the oxide semiconductor. The oxide semiconductor includes a first region overlapping the gate electrode and a second region not overlapping the gate electrode. The first insulating layer, the second region and the second insulating layer contain impurities of a same type. The impurities contained in a region directly below the second region in the first insulating layer are more than the impurities contained in the second region.

Dependencies are inferred from the claim text.